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Electron Spectrometerの製品一覧

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Low Energy Inverse Photoemission Spectroscopy Device "LEIPS"

Low Energy Inverse Photoemission Spectroscopy Device "LEIPS"

No damage to organic semiconductors & high resolution! LUMO level measurements can be made with precision that withstands research!

The low-energy inverse photoelectron spectroscopy device "LEIPS" is a low-energy inverse photoelectron spectroscopy apparatus that can measure LUMO levels with high precision without damaging organic semiconductors. By lowering the irradiation energy below the molecular covalent bond, it avoids damage to the sample. Additionally, it employs high-performance filters for light detection, achieving a resolution of less than 0.5 eV. Based on the conventional device "IPES," it addresses the challenges that have been encountered so far. 【Features】 ■ High sensitivity ■ High resolution of less than 0.5 eV ■ Contributes to the development and performance enhancement of organic semiconductors *For more details, please download the catalog or contact us.

  • Spectroscopic Analysis Equipment

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Points to consider in foreign matter analysis of AES.

Points to consider in foreign matter analysis of AES.

AES: Auger Electron Spectroscopy

In AES analysis, it is possible to evaluate the elemental composition of the surface of minute foreign substances, making it useful for foreign substance analysis in small areas. However, due to the effects of damage from electron beams and other sources, there is a possibility that the foreign substances may change or disappear. Particularly when halogen elements are involved, the impact can be significant, and caution is required. An example of a case where a foreign substance disappeared during SEM observation or AES measurement is shown, specifically regarding NaCl particles on a Si wafer, along with the results of the AES analysis.

  • Contract Analysis

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[AES] Auger Electron Spectroscopy

[AES] Auger Electron Spectroscopy

By measuring the kinetic energy distribution of Auger electrons emitted by electron beam irradiation, insights can be gained regarding the types and quantities of elements present on the sample surface.

- Qualitative and quantitative analysis of solid material surfaces (depth of several nm) is possible. - Qualitative and quantitative analysis of micro-regions (approximately tens of nm to sub-micron) is possible. - Depth profile analysis, line analysis, and area analysis of major component elements can be measured. - For several elements such as Si and Al, evaluation in both oxide and metallic states is possible. - Identification of specific areas of interest using SEM images is possible.

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  • Contract Analysis
  • Contract measurement
  • Contract Inspection

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